Patent US5247289 - Liquid crystal display device with commonly connected capacitor electrodes - Google PatenteSuche Bilder Maps Play YouTube News Gmail Drive Mehr » Erweiterte Patentsuche | Webprotokoll | Anmelden Erweiterte Patentsuche PatenteA liquid crystal display device is provided with a storage capacitor relative to each pixel electrode, and a common electrode is electrically connected to the storage capacitors of adjacent pixel structures between pairs of adjacent scan lines comprising paired odd and even numbered scan lines. With...http://www.google.de/patents/US5247289?utm_source=gb-gplus-sharePatent US5247289 - Liquid crystal display device with commonly connected capacitor electrodes Ver�ffentlichungsnummerUS5247289 APublikationstypErteilung Anmeldenummer07/628,917 Ver�ffentlichungsdatum21. Sept. 1993Eingetragen14. Dez. 1990 Priorit�tsdatum15. Dez. 1989Auch ver�ffentlicht unterEP0435101A1EP0435101B1 ErfinderYojiro MatsuedaUrspr�nglich Bevollm�chtigterSeiko Epson Corp.Seiko Epson Corporation, 4-1, Nishishinjuku 2-Chome, Shinjuku-Ku, Tokyo-To, Japan A Corp. Of Japan US-Klassifikation345/98349/43349/39349/143Internationale KlassifikationG09G3/36G02F1/133G02F1/1368G02F1/136G02F1/1362 UnternehmensklassifikationG02F1/136213G02F1/136286G09G3/3648 Europ�ische KlassifikationG02F 1/1362CG09G 3/36C8ReferenzenPatentzitate (10)Nichtpatentzitate (6) Referenziert von (56)Externe LinksUSPTO USPTO-Zuordnung EspacenetLiquid crystal display device with commonly connected capacitor electrodesUS 5247289 A Zusammenfassung A liquid crystal display device is provided with a storage capacitor relative to each pixel electrode, and a common electrode is electrically connected to the storage capacitors of adjacent pixel structures between pairs of adjacent scan lines comprising paired odd and even numbered scan lines. With the utilization of this common electrode structure comprising commonly connected capacitor lines, the number of common electrodes necessary for electrically connecting storage capacitors of the pixel structures can be reduced by one-half and the number of the source electrodes connecting portions of the TFTs can be reduced by one-half as compared with the conventional technique utilizing a single storage capacitor per pixel structure. Therefore, a high aperture ratio can be maintained in spite of a decrease in pixel pitch to form a more dense pixel array. The common electrode lines could alternatively be formed between pairs of adjacent signal lines rather than pairs of adjacent scan lines, i.e., the common capacitor connection of the storage capacitors by the common electrodes is primary and the directional orientation of the common electrodes is secondary.
What is claimed is: 1. A liquid crystal display device comprising: a first insulative substrate, a plurality of columns of parallel signal lines and a plurality of rows of parallel scan lines formed on said first insulative substrate, said parallel scan lines formed in one orthogonal direction and said parallel signal lines formed in another orthogonal direction, a plurality of substantially parallel lines of spatially positioned pixel electrodes formed on said first insulative substrate with each of said pixel electrodes connected to a corresponding signal and scan line at crossing points of said orthogonal signal and scan lines, whereby said pixel electrodes are arranged in a matrix configuration, said parallel pixel electrode lines aligned with said parallel scan lines such that adjacent parallel pixel electrode lines are formed between two parallel scan lines so that in said another orthogonal direction two adjacent parallel scan lines alternate with two adjacent parallel pixel electrode lines, transistor means associated with each of said pixel electrodes comprising a gate and a source and drain domain and located at a crossing point of said signal and scan lines with its gate connected to the crosspoint scan line and with one of said domains connected to the crosspoint signal lines, said each of said pixel electrodes connected to the other of said domains of said transistor means, a second insulative substrate spatially disposed parallel to said first insulative substrate and having thereon a counter electrode, a liquid crystal interposed between said first and second insulative substrate, a single common conductor line formed between said adjacent pixel electrode lines, and a storage device formed on said first insulative substrate substantially adjacent to each of said pixel electrodes, each said storage device being coupled to a corresponding pixel electrode in said adjacent pixel electrode lines and also being coupled with one said single common conductor line.
5. A liquid crystal display device having a circuit arrangement comprising: a matrix of formed pixel cells arranged in an orthogonal matrix of rows and columns, each of said cells including a pixel electrode and a TFT with a first domain connected to said pixel electrode, a storage device formed substantially adjacent to a respective pixel electrode and coupled on one side to said TFT first domain and said pixel electrode, a plurality of first electrical lines for communication with said cells formed in a first direction relative to said orthogonal matrix, a plurality of second electrical lines formed for communication with said cells formed in a second direction relative to said orthogonal matrix, said second direction being substantially orthogonal relative to said first direction, adjacent rows of said pixel electrodes formed between adjacent rows of said first electrical lines so that adjacent pixel electrode rows are alternated with adjacent first electrical line rows along said second direction, and a common electrode line formed in said first direction between adjacent pixel electrode rows for coupling to another side of the storage devices corresponding to adjacent vertically aligned pixel electrodes in said adjacent pixel electrode rows.
7. A liquid crystal display device having a circuit arrangement comprising: a matrix of liquid crystal elements arranged in adjacent successive rows, a plurality of selective coupling means each connected to a respective liquid crystal element, a plurality of storage devices formed substantially adjacent to a respective liquid crystal element and connected on one side to said selective coupling means and said respective liquid crystal element, a plurality of signal lines formed in a first direction, each connected to a plurality of said selective coupling means, a plurality of scan lines formed in a second direction transverse to said first direction, each connected to a plurality of said selective coupling means, said matrix formed so that adjacent, parallel rows of said liquid crystal elements are formed between two of said scan lines so that a pair of scan lines is alternated with a pair of liquid crystal element rows in said first direction and a single common conductor line formed between said liquid crystal element row pairs and coupled in common to the other side of said storage devices corresponding to said liquid crystal elements of said pair of liquid crystal element rows.
9. A liquid crystal display device comprising: a first insulative substrate, a plurality of first parallel conductive lines and second parallel conductive lines formed on said first insulative substrate, said first parallel lines formed in a first orthogonal direction and said second parallel lines formed in a second orthogonal direction, a plurality of pixel cells formed on said first insulative substrate with each connected to a corresponding scan and signal line at crossing points of said orthogonal first and second parallel lines, each of said cells including a pixel electrode with all of said cells arranged in a matrix configuration in spacing between said orthogonal first and second parallel lines, said pixel cells arranged in rows parallel with said first parallel conductive lines such that adjacent parallel pixel cell rows are formed between two parallel conductive lines so that in said second orthogonal direction two adjacent parallel conductive lines alternate with two adjacent parallel pixel cell rows, transistor means at each of said pixel cells comprising a gate and a source and drain domain and located at a crossing point of each of said first and second parallel lines with a respective gate connected to the crosspoint first parallel line, and with a first of said domains connected to the crosspoint second parallel line, and with a second of said domains connected to a pixel electrode, a storage device formed substantially adjacent to a respective pixel electrode and having a first terminal connected to said second domain of said transistor means, a second insulative substrate spatially disposed parallel to said first insulative substrate and having thereon a counter electrode, a liquid crystal medium interposed between said first and second insulative substrate, and a single common conductor line formed between said adjacent pixel cell rows for coupling to storage devices corresponding to vertically aligned pixel cells in said adjacent pixel cell rows.
An example of a liquid crystal display device utilizing TFT switching devices is described in an article to Matsueda et al., entitled "Optimization of 0.94-in. Poly-Si TFT Light Valve for LCD Projector", The Japan Display 89 Digest, pages 418-421, Date, 1989. As an example of the display element circuit of Matsueda et al. employing TFT switching devices is illustrated in FIG. 2. The column signal lines are X.sub.1, X.sub.2. . . to which image signals are applied and the row scan lines are Y.sub.1, Y.sub.2, Y.sub.3, Y.sub.4. . . to which TFT switching signals are applied. TFT devices 11, 12, 13 are provided at the cross point between signal line X.sub.1 and scan lines Y.sub.1, Y.sub.2, Y.sub.3. . . adjacent to these respective devices. TFT devices 11', 12', 13' are provided at the cross point between signal line X.sub.2 and scan lines Y.sub.1, Y.sub.2, Y.sub.3. . . adjacent to these respective devices and so on. TFTs 11, 12 and 13 are turned ON or OFF in accordance with the timing of a selective pulses applied to respective scan lines Y.sub.1, Y.sub.2, Y.sub.3. . . . The image signal applied to signal line X.sub.1 is written into respective liquid crystal display (LCD) elements represented by capacitances 17, 18 and 19 and storage capacitors 14, 15 and 16 through a respective activated TFT 11, 12 and 13. Thus, for example, TFT 11, storage capacitor 14 and LCD element 17 represent one pixel structure.
DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference is now made to FIG. 1 wherein there is shown a schematic circuit diagram of this invention. In FIG. 1, TFTs 1, 2 and 3 are provided respectively at the cross points between signal line X.sub.1 and scan lines Y.sub.1, Y.sub.2, Y.sub.3 . . . . TFTs 1', 2' and 3' are provided respectively at the cross points between signal line X.sub.2 and scan lines Y.sub.1, Y.sub.2, Y.sub.3 . . . and so on. TFTs 1-3 are turned ON or OFF in accordance with a selective timing pulse applied to respective scanning lines Y.sub.1, Y.sub.2, Y.sub.3 . . . . The image signal applied to signal line X.sub.1 and is written into respective display elements represented by liquid crystal capacitance display elements represented by liquid crystal capacitance 7, 8 and 9 and also into storage capacitor 4, 5 and 6 through respectively activated TFTs 1-3. In this invention, common electrode 10, comprising a commonly connected capacitor line for electrically connecting storage capacitors, is arranged in the ratio of one to every two scan lines. For example, since storage capacitor 4 and 5 are formed on similar electrode wiring arrangements, a sufficient amount of necessary capacitance can be formed within a smaller occupied region as compared with the conventional structure wherein the storage capacitor is formed relative to each electrode wiring. Further, since a pair of TFTs for upper and lower pixels are arranged in parallel, pairs of sources for adjacent TFTs can be commonly connecting together to a corresponding signal line. For example, the connecting point between TFT 2 and 3 and signal line X.sub.1 is formed as a single portion. Therefore, the occupied area of the TFTs can be reduced.
In the present embodiment, since common electrode 37 is arranged in a region between the pixel electrodes, which is not an essential region for the displayed image, high aperture ratio can be achieved. The area of aperture 40 in FIG. 4 is larger by about 30% compared to that for aperture 30 in FIG. 3. Thus, the image plane can be formed to be brighter by 30% relative to forming similar display elements having similar pixel pitch. Furthermore, since the form of aperture 40 can now fully approximate a square, as compared to a rectangular aperture 30 in the conventional case, the viewing lattice on the screen display becomes clearer thereby significantly improving the image quality. Also, if an inclined wiring pattern is employed, i.e., the layout of the wiring pattern is positioned at an oblique angle, e.g., 45 structure so that the corners of the formed apertures take on a trimmed appearance rendering the apertures to look circular in contour.
Patentzitate Zitiertes PatentEingetragen Ver�ffentlichungsdatum Antragsteller TitelUS439338028. Mai 198012. Juli 1983Kabushiki Kaisha Suwa SeikoshaLiquid crystal display systemsUS443127128. Aug. 198014. Febr. 1984Canon Kabushiki KaishaDisplay device with a thin film transistor and storage condenserUS468729810. Apr. 198518. Aug. 1987Hosiden Electronics, Ltd.Forming an opaque metal layer in a liquid crystal displayUS473394817. Dez. 198529. M�rz 1988Canon Kabushiki KaishaColor liquid crystal display with light intercepting memberUS484237114. Apr. 198827. Juni 1989Sharp Kabushiki KaishaLiquid crystal display device having interlaced driving circuits for driving rows and columns one-half cycle out of phaseEP0194315A122. Aug. 198517. Sept. 1986Sony CorporationLiquid crystal displayEP0341003A228. Apr. 19898. Nov. 1989Sharp Kabushiki KaishaThin film semiconductor device and liquid crystal display apparatus using thereofEP0376329A228. Dez. 19894. Juli 1990Sony CorporationLiquid crystal display deviceGB2050668A Titel nicht verf�gbarJP63273838A Titel nicht verf�gbarNichtpatentzitateReferenz1M. Shibusawa et al., "A 212-Line/in. Full-Color TFT-LCD for Cockpit Use", SID 89 Digest, pp. 230-233.2M. Shibusawa et al., A 212 Line/in. Full Color TFT LCD for Cockpit Use , SID 89 Digest, pp. 230 233.3O. Tomita et al., "A 6.5-in.-Diagonal TFT-LCD Module for Liquid Crystal TV", SID 89 Digest, pp. 151-154.4O. Tomita et al., A 6.5 in. Diagonal TFT LCD Module for Liquid Crystal TV , SID 89 Digest, pp. 151 154.5Y. Matsueda et al., "Optimization of 0.94-in. Poly-Si TFT Light Valve for LCD Projector", Japan Display'89, pp. 418-421.6Y. Matsueda et al., Optimization of 0.94 in. Poly Si TFT Light Valve for LCD Projector , Japan Display 89, pp. 418 421. Referenziert von Zitiert von PatentEingetragen Ver�ffentlichungsdatum Antragsteller TitelUS532726818. Febr. 19935. Juli 1994Hitachi, Ltd.Reflective type liquid crystal display with reversely staggered TFT structuresUS54575538. Nov. 199410. Okt. 1995Casio Computer Co., Ltd.Thin-film transistor panel with reduced number of capacitor linesUS548648518. Febr. 199423. Jan. 1996Philip Electronics North America CorporationMethod of manufacturing a reflective displayUS549134728. Apr. 199413. Febr. 1996Xerox CorporationThin-film structure with dense array of binary control units for presenting imagesUS557685730. M�rz 199319. Nov. 1996Semiconductor Energy Laboratory Co., Ltd.Electro-optical device with transistors and capacitors method of driving the sameUS560045920. Dez. 19934. Febr. 1997Roy; Howard S.Multiple-shutter flat-panel display having individually controlled pixels and method for making sameUS560046114. Juni 19954. Febr. 1997Kabushiki Kaisha ToshibaActive matrix liquid crystal display deviceUS577409910. Apr. 199630. Juni 1998Hitachi Device Engineering Co., Ltd.Liquid crystal device with wide viewing angle characteristicsUS579009016. Okt. 19964. Aug. 1998International Business Machines CorporationActive matrix liquid crystal display with reduced drive pulse amplitudesUS581452916. Jan. 199629. Sept. 1998Semiconductor Energy Laboratory Co., Ltd.Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS583170830. Aug. 19963. Nov. 1998Sharp Kabushiki KaishaLiquid crystal display with a scanning line having a ring shaped redundant section and method for fabricating the sameUS592331020. Jan. 199713. Juli 1999Samsung Electronics Co., Ltd.Liquid crystal display devices with increased viewing angle capability and methods of operating sameUS599923415. Apr. 19977. Dez. 1999International Business Machines CorporationTransmissive cell for ultra small pixel applicationsUS614099016. Okt. 199831. Okt. 2000International Business Machines CorporationActive matrix liquid crystal display incorporating pixel inversion with reduced drive pulse amplitudesUS62560768. Juli 19983. Juli 2001Samsung Electronics Co., Ltd.Liquid crystal displays having switching elements and storage capacitors and a manufacturing method thereofUS628541817. Dez. 19994. Sept. 2001Lg.Philips Lcd Co., Ltd.Storage capacitor in a liquid crystal display in which the storage capacitor electrode is arranged to overlap an entire width of the recessed portion of the gate lineUS63202247. Juli 199820. Nov. 2001Semiconductor Energy Laboratory Co., Ltd.Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS643783923. Apr. 199920. Aug. 2002National Semiconductor CompanyLiquid crystal on silicon (LCOS) display pixel with multiple storage capacitorsUS647690024. Nov. 19985. Nov. 2002Hyundai Display Technology Inc.Liquid crystal displayUS65562572. Sept. 199229. Apr. 2003Sony CorporationLiquid crystal display deviceUS658343915. M�rz 200124. Juni 2003Semiconductor Energy Laboratory Co., Ltd.Semiconductor deviceUS66215375. Okt. 199916. Sept. 2003Advanced Display Inc.Active matrix liquid crystal display and manufacturing method of the sameUS697020911. Mai 200129. Nov. 2005Samsung Electronics Co., Ltd.Thin film transistor array substrate for a liquid crystal display and method for fabricating the sameUS704628218. Sept. 199816. Mai 2006Semiconductor Energy Laboratory Co., Ltd.Image sensor and image sensor integrated type active matrix type display deviceUS711631919. Mai 20033. Okt. 2006Canon Kabushiki KaishaImage forming apparatus and radiation detection systemUS714562325. Okt. 20025. Dez. 2006Sharp Kabushiki KaishaFlat panel display having concentrated switching element arrangement and method of manufacturing the sameUS71544617. Jan. 200426. Dez. 2006Hannstar Display CorporationLiquid crystal display panel and driving method thereforUS71800926. Mai 200320. Febr. 2007Semiconductor Energy Laboratory Co., Ltd.Semiconductor deviceUS72861734. Mai 200623. Okt. 2007Semiconductor Energy Laboratory Co., Ltd.Image sensor and image sensor integrated type active matrix type display deviceUS73691881. Nov. 20056. Mai 2008Samsung Electronics Co., Ltd.Thin film transistor substrate having two storage capacitors per pixel, method of manufacturing the same and display apparatus having the sameUS751773815. Nov. 200114. Apr. 2009Semiconductor Energy Laboratory Co., Ltd.Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS761578631. Okt. 200710. Nov. 2009Semiconductor Energy Laboratory Co., Ltd.Thin film transistor incorporating an integrated capacitor and pixel regionUS767136928. M�rz 20032. M�rz 2010Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS76878092. Mai 200830. M�rz 2010Semiconductor Energy Laboratory Co., LtdMethod for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS770535623. Jan. 200827. Apr. 2010Samsung Mobile Display Co., Ltd.Electronic device, thin film transistor structure and flat panel display having the sameUS770535922. Febr. 200827. Apr. 2010Samsung Mobile Display Co., Ltd.Electronic device, thin film transistor structure and flat panel display having the sameUS770983930. Juni 20054. Mai 2010Samsung Mobile Display Co., Ltd.Electronic device including a conductive layer having a width change part, thin film transistor structure and flat panel display having the sameUS779111714. Aug. 20077. Sept. 2010Semiconductor Energy Laboratory Co., Ltd.Image sensor and image sensor integrated type active matrix type display deviceUS786361921. Apr. 20094. Jan. 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and a method for manufacturing the sameUS795597521. Juli 20107. Juni 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS796487419. Mai 200821. Juni 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having a protective circuitUS799450431. Juli 20099. Aug. 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS79992634. Aug. 200516. Aug. 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS800866624. Febr. 201030. Aug. 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS805377830. Dez. 20108. Nov. 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and a method for manufacturing the sameUS811521017. Juni 201114. Febr. 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS812003131. Juli 200721. Febr. 2012Semiconductor Energy Laboratory Co., Ltd.Display device including an opening formed in a gate insulating film, a passivation film, and a barrier filmUS812003321. Juli 201021. Febr. 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS813018718. Juli 20016. M�rz 2012Toshiba Matsushita Display Technology Co., Ltd.OCB liquid crystal display with active matrix and supplemental capacitors and driving method for the sameUS821280230. Okt. 20073. Juli 2012Samsung Electronics Co., Ltd.Driving apparatus of display device and display device including the sameUS83246937. Nov. 20114. Dez. 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and a method for manufacturing the sameUS836807231. Juli 20085. Febr. 2013Semiconductor Energy Labratory Co., Ltd.Display device and method of fabricating the sameUS2008026648923. Apr. 200830. Okt. 2008Nec Lcd Technologies, LtdMethod of fabricating light-reflector in liquid crystal display deviceUS201202127003. Mai 201223. Aug. 2012Chimei Innolux CorporationLiquid crystal panel having notches for repairCN1716603B30. Juni 200529. Sept. 2010Samsung mobile display corpElectronic device, thin film transistor structure and flat panel display having the sameCN100565911C30. Juni 20052. Dez. 2009Samsung mobile display corpElectronic apparatus thin-film transistor structure and flat plate display device equipped with sameDrehenOriginalbildGoogle-Startseite - Sitemap - USPTO-Bulk-Downloads - Datenschutzerkl�rung - Nutzungsbedingungen - �ber Google Patente - Feedback gebenDaten bereitgestellt von IFI CLAIMS Patent Services.© 2012 Google
Patent US5247289 - Liquid crystal display device with commonly connected capacitor electrodes - Google PatenteSuche Bilder Maps Play YouTube News Gmail Drive Mehr » Erweiterte Patentsuche | Webprotokoll | Anmelden Erweiterte Patentsuche PatenteA liquid crystal display device is provided with a storage capacitor relative to each pixel electrode, and a common electrode is electrically connected to the storage capacitors of adjacent pixel structures between pairs of adjacent scan lines comprising paired odd and even numbered scan lines. With...http://www.google.de/patents/US5247289?utm_source=gb-gplus-sharePatent US5247289 - Liquid crystal display device with commonly connected capacitor electrodes Ver�ffentlichungsnummerUS5247289 APublikationstypErteilung Anmeldenummer07/628,917 Ver�ffentlichungsdatum21. Sept. 1993Eingetragen14. Dez. 1990 Priorit�tsdatum15. Dez. 1989Auch ver�ffentlicht unterEP0435101A1EP0435101B1 ErfinderYojiro MatsuedaUrspr�nglich Bevollm�chtigterSeiko Epson Corp.Seiko Epson Corporation, 4-1, Nishishinjuku 2-Chome, Shinjuku-Ku, Tokyo-To, Japan A Corp. Of Japan US-Klassifikation345/98349/43349/39349/143Internationale KlassifikationG09G3/36G02F1/133G02F1/1368G02F1/136G02F1/1362 UnternehmensklassifikationG02F1/136213G02F1/136286G09G3/3648 Europ�ische KlassifikationG02F 1/1362CG09G 3/36C8ReferenzenPatentzitate (10)Nichtpatentzitate (6) Referenziert von (56)Externe LinksUSPTO USPTO-Zuordnung EspacenetLiquid crystal display device with commonly connected capacitor electrodesUS 5247289 A Zusammenfassung A liquid crystal display device is provided with a storage capacitor relative to each pixel electrode, and a common electrode is electrically connected to the storage capacitors of adjacent pixel structures between pairs of adjacent scan lines comprising paired odd and even numbered scan lines. With the utilization of this common electrode structure comprising commonly connected capacitor lines, the number of common electrodes necessary for electrically connecting storage capacitors of the pixel structures can be reduced by one-half and the number of the source electrodes connecting portions of the TFTs can be reduced by one-half as compared with the conventional technique utilizing a single storage capacitor per pixel structure. Therefore, a high aperture ratio can be maintained in spite of a decrease in pixel pitch to form a more dense pixel array. The common electrode lines could alternatively be formed between pairs of adjacent signal lines rather than pairs of adjacent scan lines, i.e., the common capacitor connection of the storage capacitors by the common electrodes is primary and the directional orientation of the common electrodes is secondary.
What is claimed is: 1. A liquid crystal display device comprising: a first insulative substrate, a plurality of columns of parallel signal lines and a plurality of rows of parallel scan lines formed on said first insulative substrate, said parallel scan lines formed in one orthogonal direction and said parallel signal lines formed in another orthogonal direction, a plurality of substantially parallel lines of spatially positioned pixel electrodes formed on said first insulative substrate with each of said pixel electrodes connected to a corresponding signal and scan line at crossing points of said orthogonal signal and scan lines, whereby said pixel electrodes are arranged in a matrix configuration, said parallel pixel electrode lines aligned with said parallel scan lines such that adjacent parallel pixel electrode lines are formed between two parallel scan lines so that in said another orthogonal direction two adjacent parallel scan lines alternate with two adjacent parallel pixel electrode lines, transistor means associated with each of said pixel electrodes comprising a gate and a source and drain domain and located at a crossing point of said signal and scan lines with its gate connected to the crosspoint scan line and with one of said domains connected to the crosspoint signal lines, said each of said pixel electrodes connected to the other of said domains of said transistor means, a second insulative substrate spatially disposed parallel to said first insulative substrate and having thereon a counter electrode, a liquid crystal interposed between said first and second insulative substrate, a single common conductor line formed between said adjacent pixel electrode lines, and a storage device formed on said first insulative substrate substantially adjacent to each of said pixel electrodes, each said storage device being coupled to a corresponding pixel electrode in said adjacent pixel electrode lines and also being coupled with one said single common conductor line.
5. A liquid crystal display device having a circuit arrangement comprising: a matrix of formed pixel cells arranged in an orthogonal matrix of rows and columns, each of said cells including a pixel electrode and a TFT with a first domain connected to said pixel electrode, a storage device formed substantially adjacent to a respective pixel electrode and coupled on one side to said TFT first domain and said pixel electrode, a plurality of first electrical lines for communication with said cells formed in a first direction relative to said orthogonal matrix, a plurality of second electrical lines formed for communication with said cells formed in a second direction relative to said orthogonal matrix, said second direction being substantially orthogonal relative to said first direction, adjacent rows of said pixel electrodes formed between adjacent rows of said first electrical lines so that adjacent pixel electrode rows are alternated with adjacent first electrical line rows along said second direction, and a common electrode line formed in said first direction between adjacent pixel electrode rows for coupling to another side of the storage devices corresponding to adjacent vertically aligned pixel electrodes in said adjacent pixel electrode rows.
7. A liquid crystal display device having a circuit arrangement comprising: a matrix of liquid crystal elements arranged in adjacent successive rows, a plurality of selective coupling means each connected to a respective liquid crystal element, a plurality of storage devices formed substantially adjacent to a respective liquid crystal element and connected on one side to said selective coupling means and said respective liquid crystal element, a plurality of signal lines formed in a first direction, each connected to a plurality of said selective coupling means, a plurality of scan lines formed in a second direction transverse to said first direction, each connected to a plurality of said selective coupling means, said matrix formed so that adjacent, parallel rows of said liquid crystal elements are formed between two of said scan lines so that a pair of scan lines is alternated with a pair of liquid crystal element rows in said first direction and a single common conductor line formed between said liquid crystal element row pairs and coupled in common to the other side of said storage devices corresponding to said liquid crystal elements of said pair of liquid crystal element rows.
9. A liquid crystal display device comprising: a first insulative substrate, a plurality of first parallel conductive lines and second parallel conductive lines formed on said first insulative substrate, said first parallel lines formed in a first orthogonal direction and said second parallel lines formed in a second orthogonal direction, a plurality of pixel cells formed on said first insulative substrate with each connected to a corresponding scan and signal line at crossing points of said orthogonal first and second parallel lines, each of said cells including a pixel electrode with all of said cells arranged in a matrix configuration in spacing between said orthogonal first and second parallel lines, said pixel cells arranged in rows parallel with said first parallel conductive lines such that adjacent parallel pixel cell rows are formed between two parallel conductive lines so that in said second orthogonal direction two adjacent parallel conductive lines alternate with two adjacent parallel pixel cell rows, transistor means at each of said pixel cells comprising a gate and a source and drain domain and located at a crossing point of each of said first and second parallel lines with a respective gate connected to the crosspoint first parallel line, and with a first of said domains connected to the crosspoint second parallel line, and with a second of said domains connected to a pixel electrode, a storage device formed substantially adjacent to a respective pixel electrode and having a first terminal connected to said second domain of said transistor means, a second insulative substrate spatially disposed parallel to said first insulative substrate and having thereon a counter electrode, a liquid crystal medium interposed between said first and second insulative substrate, and a single common conductor line formed between said adjacent pixel cell rows for coupling to storage devices corresponding to vertically aligned pixel cells in said adjacent pixel cell rows.
An example of a liquid crystal display device utilizing TFT switching devices is described in an article to Matsueda et al., entitled "Optimization of 0.94-in. Poly-Si TFT Light Valve for LCD Projector", The Japan Display 89 Digest, pages 418-421, Date, 1989. As an example of the display element circuit of Matsueda et al. employing TFT switching devices is illustrated in FIG. 2. The column signal lines are X.sub.1, X.sub.2. . . to which image signals are applied and the row scan lines are Y.sub.1, Y.sub.2, Y.sub.3, Y.sub.4. . . to which TFT switching signals are applied. TFT devices 11, 12, 13 are provided at the cross point between signal line X.sub.1 and scan lines Y.sub.1, Y.sub.2, Y.sub.3. . . adjacent to these respective devices. TFT devices 11', 12', 13' are provided at the cross point between signal line X.sub.2 and scan lines Y.sub.1, Y.sub.2, Y.sub.3. . . adjacent to these respective devices and so on. TFTs 11, 12 and 13 are turned ON or OFF in accordance with the timing of a selective pulses applied to respective scan lines Y.sub.1, Y.sub.2, Y.sub.3. . . . The image signal applied to signal line X.sub.1 is written into respective liquid crystal display (LCD) elements represented by capacitances 17, 18 and 19 and storage capacitors 14, 15 and 16 through a respective activated TFT 11, 12 and 13. Thus, for example, TFT 11, storage capacitor 14 and LCD element 17 represent one pixel structure.
DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference is now made to FIG. 1 wherein there is shown a schematic circuit diagram of this invention. In FIG. 1, TFTs 1, 2 and 3 are provided respectively at the cross points between signal line X.sub.1 and scan lines Y.sub.1, Y.sub.2, Y.sub.3 . . . . TFTs 1', 2' and 3' are provided respectively at the cross points between signal line X.sub.2 and scan lines Y.sub.1, Y.sub.2, Y.sub.3 . . . and so on. TFTs 1-3 are turned ON or OFF in accordance with a selective timing pulse applied to respective scanning lines Y.sub.1, Y.sub.2, Y.sub.3 . . . . The image signal applied to signal line X.sub.1 and is written into respective display elements represented by liquid crystal capacitance display elements represented by liquid crystal capacitance 7, 8 and 9 and also into storage capacitor 4, 5 and 6 through respectively activated TFTs 1-3. In this invention, common electrode 10, comprising a commonly connected capacitor line for electrically connecting storage capacitors, is arranged in the ratio of one to every two scan lines. For examp
le, since storage capacitor 4 and 5 are formed on similar electrode wiring arrangements, a sufficient amount of necessary capacitance can be formed within a smaller occupied region as compared with the conventional structure wherein the storage capacitor is formed relative to each electrode wiring. Further, since a pair of TFTs for upper and lower pixels are arranged in parallel, pairs of sources for adjacent TFTs can be commonly connecting together to a corresponding signal line. For example, the connecting point between TFT 2 and 3 and signal line X.sub.1 is formed as a single portion. Therefore, the occupied area of the TFTs can be reduced.
In the present embodiment, since common electrode 37 is arranged in a region between the pixel electrodes, which is not an essential region for the displayed image, high aperture ratio can be achieved. The area of aperture 40 in FIG. 4 is larger by about 30% compared to that for aperture 30 in FIG. 3. Thus, the image plane can be formed to be brighter by 30% relative to forming similar display elements having similar pixel pitch. Furthermore, since the form of aperture 40 can now fully approximate a square, as compared to a rectangular aperture 30 in the conventional case, the viewing lattice on the screen display becomes clearer thereby significantly improving the image quality. Also, if an inclined wiring pattern is employed, i.e., the layout of the wiring pattern is positioned at an oblique angle, e.g., 45 structure so that the corners of the formed apertures take on a trimmed appearance rendering the apertures to look circular in contour.
Patentzitate Zitiertes PatentEingetragen Ver�ffentlichungsdatum Antragsteller TitelUS439338028. Mai 198012. Juli 1983Kabushiki Kaisha Suwa SeikoshaLiquid crystal display systemsUS443127128. Aug. 198014. Febr. 1984Canon Kabushiki KaishaDisplay device with a thin film transistor and storage condenserUS468729810. Apr. 198518. Aug. 1987Hosiden Electronics, Ltd.Forming an opaque metal layer in a liquid crystal displayUS473394817. Dez. 198529. M�rz 1988Canon Kabushiki KaishaColor liquid crystal display with light intercepting memberUS484237114. Apr. 198827. Juni 1989Sharp Kabushiki KaishaLiquid crystal display device having interlaced driving circuits for driving rows and columns one-half cycle out of phaseEP0194315A122. Aug. 198517. Sept. 1986Sony CorporationLiquid crystal displayEP0341003A228. Apr. 19898. Nov. 1989Sharp Kabushiki KaishaThin film semiconductor device and liquid crystal display apparatus using thereofEP0376329A228. Dez. 19894. Juli 1990Sony CorporationLiquid crystal display deviceGB2050668A Titel nicht verf�gbarJP63273838A Titel nicht verf�gbarNichtpatentzitateReferenz1M. Shibusawa et al., "A 212-Line/in. Full-Color TFT-LCD for Cockpit Use", SID 89 Digest, pp. 230-233.2M. Shibusawa et al., A 212 Line/in. Full Color TFT LCD for Cockpit Use , SID 89 Digest, pp. 230 233.3O. Tomita et al., "A 6.5-in.-Diagonal TFT-LCD Module for Liquid Crystal TV", SID 89 Digest, pp. 151-154.4O. Tomita et al., A 6.5 in. Diagonal TFT LCD Module for Liquid Crystal TV , SID 89 Digest, pp. 151 154.5Y. Matsueda et al., "Optimization of 0.94-in. Poly-Si TFT Light Valve for LCD Projector", Japan Display'89, pp. 418-421.6Y. Matsueda et al., Optimization of 0.94 in. Poly Si TFT Light Valve for LCD Projector , Japan Display 89, pp. 418 421. Referenziert von Zitiert von PatentEingetragen Ver�ffentlichungsdatum Antragsteller TitelUS532726818. Febr. 19935. Juli 1994Hitachi, Ltd.Reflective type liquid crystal display with reversely staggered TFT structuresUS54575538. Nov. 199410. Okt. 1995Casio Computer Co., Ltd.Thin-film transistor panel with reduced number of capacitor linesUS548648518. Febr. 199423. Jan. 1996Philip Electronics North America CorporationMethod of manufacturing a reflective displayUS549134728. Apr. 199413. Febr. 1996Xerox CorporationThin-film structure with dense array of binary control units for presenting imagesUS557685730. M�rz 199319. Nov. 1996Semiconductor Energy Laboratory Co., Ltd.Electro-optical device with transistors and capacitors method of driving the sameUS560045920. Dez. 19934. Febr. 1997Roy; Howard S.Multiple-shutter flat-panel display having individually controlled pixels and method for making sameUS560046114. Juni 19954. Febr. 1997Kabushiki Kaisha ToshibaActive matrix liquid crystal display deviceUS577409910. Apr. 199630. Juni 1998Hitachi Device Engineering Co., Ltd.Liquid crystal device with wide viewing angle characteristicsUS579009016. Okt. 19964. Aug. 1998International Business Machines CorporationActive matrix liquid crystal display with reduced drive pulse amplitudesUS581452916. Jan. 199629. Sept. 1998Semiconductor Energy Laboratory Co., Ltd.Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS583170830. Aug. 19963. Nov. 1998Sharp Kabushiki KaishaLiquid crystal display with a scanning line having a ring shaped redundant section and method for fabricating the sameUS592331020. Jan. 199713. Juli 1999Samsung Electronics Co., Ltd.Liquid crystal display devices with increased viewing angle capability and methods of operating sameUS599923415. Apr. 19977. Dez. 1999International Business Machines CorporationTransmissive cell for ultra small pixel applicationsUS614099016. Okt. 199831. Okt. 2000International Business Machines CorporationActive matrix liquid crystal display incorporating pixel inversion with reduced drive pulse amplitudesUS62560768. Juli 19983. Juli 2001Samsung Electronics Co., Ltd.Liquid crystal displays having switching elements and storage capacitors and a manufacturing method thereofUS628541817. Dez. 19994. Sept. 2001Lg.Philips Lcd Co., Ltd.Storage capacitor in a liquid crystal display in which the storage capacitor electrode is arranged to overlap an entire width of the recessed portion of the gate lineUS63202247. Juli 199820. Nov. 2001Semiconductor Energy Laboratory Co., Ltd.Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS643783923. Apr. 199920. Aug. 2002National Semiconductor CompanyLiquid crystal on silicon (LCOS) display pixel with multiple storage capacitorsUS647690024. Nov. 19985. Nov. 2002Hyundai Display Technology Inc.Liquid crystal displayUS65562572. Sept. 199229. Apr. 2003Sony CorporationLiquid crystal display deviceUS658343915. M�rz 200124. Juni 2003Semiconductor Energy Laboratory Co., Ltd.Semiconductor deviceUS66215375. Okt. 199916. Sept. 2003Advanced Display Inc.Active matrix liquid crystal display and manufacturing method of the sameUS697020911. Mai 200129. Nov. 2005Samsung Electronics Co., Ltd.Thin film transistor array substrate for a liquid crystal display and method for fabricating the sameUS704628218. Sept. 199816. Mai 2006Semiconductor Energy Laboratory Co., Ltd.Image sensor and image sensor integrated type active matrix type display deviceUS711631919. Mai 20033. Okt. 2006Canon Kabushiki KaishaImage forming apparatus and radiation detection systemUS714562325. Okt. 20025. Dez. 2006Sharp Kabushiki KaishaFlat panel display having concentrated switching element arrangement and method of manufacturing the sameUS71544617. Jan. 200426. Dez. 2006Hannstar Display CorporationLiquid crystal display panel and driving method thereforUS71800926. Mai 200320. Febr. 2007Semiconductor Energy Laboratory Co., Ltd.Semiconductor deviceUS72861734. Mai 200623. Okt. 2007Semiconductor Energy Laboratory Co., Ltd.Image sensor and image sensor integrated type active matrix type display deviceUS73691881. Nov. 20056. Mai 2008Samsung Electronics Co., Ltd.Thin film transistor substrate having two storage capacitors per pixel, method of manufacturing the same and display apparatus having the sameUS751773815. Nov. 200114. Apr. 2009Semiconductor Energy Laboratory Co., Ltd.Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS761578631. Okt. 200710. Nov. 2009Semiconductor Energy Laboratory Co., Ltd.Thin film transistor incorporating an integrated capacitor and pixel regionUS767136928. M�rz 20032. M�rz 2010Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS76878092. Mai 200830. M�rz 2010Semiconductor Energy Laboratory Co., LtdMethod for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS770535623. Jan. 200827. Apr. 2010Samsung Mobile Display Co., Ltd.Electronic device, thin film transistor structure and flat panel display having the sameUS770535922. Febr. 200827. Apr. 2010Samsung Mobile Display Co., Ltd.Electronic device, thin film transistor structure and flat panel display having the sameUS770983930. Juni 20054. Mai 2010Samsung Mobile Display Co., Ltd.Electronic device including a conductive layer having a width change part, thin film transistor structure and flat panel display having the sameUS779111714. Aug. 20077. Sept. 2010Semiconductor Energy Laboratory Co., Ltd.Image sensor and image sensor integrated type active matrix type display deviceUS786361921. Apr. 20094. Jan. 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and a method for manufacturing the sameUS795597521. Juli 20107. Juni 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS796487419. Mai 200821. Juni 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having a protective circuitUS799450431. Juli 20099. Aug. 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS79992634. Aug. 200516. Aug. 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS800866624. Febr. 201030. Aug. 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS805377830. Dez. 20108. Nov. 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and a method for manufacturing the sameUS811521017. Juni 201114. Febr. 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS812003131. Juli 200721. Febr. 2012Semiconductor Energy Laboratory Co., Ltd.Display device including an opening formed in a gate insulating film, a passivation film, and a barrier filmUS812003321. Juli 201021. Febr. 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS813018718. Juli 20016. M�rz 2012Toshiba Matsushita Display Technology Co., Ltd.OCB liquid crystal display with active matrix and supplemental capacitors and driving method for the sameUS821280230. Okt. 20073. Juli 2012Samsung Electronics Co., Ltd.Driving apparatus of display device and display device including the sameUS83246937. Nov. 20114. Dez. 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and a method for manufacturing the sameUS836807231. Juli 20085. Febr. 2013Semiconductor Energy Labratory Co., Ltd.Display device and method of fabricating the sameUS2008026648923. Apr. 200830. Okt. 2008Nec Lcd Technologies, LtdMethod of fabricating light-reflector in liquid crystal display deviceUS201202127003. Mai 201223. Aug. 2012Chimei Innolux CorporationLiquid crystal panel having notches for repairCN1716603B30. Juni 200529. Sept. 2010Samsung mobile display corpElectronic device, thin film transistor structure and flat panel display having the sameCN100565911C30. Juni 20052. Dez. 2009Samsung mobile display corpElectronic apparatus thin-film transistor structure and flat plate display device equipped with sameDrehenOriginalbildGoogle-Startseite - Sitemap - USPTO-Bulk-Downloads - Datenschutzerkl�rung - Nutzungsbedingungen - �ber Google Patente - Feedback gebenDaten bereitgestellt von IFI CLAIMS Patent Services.© 2012 Google